READING METHOD OF NONVOLATILE MEMORY DEVICE, AND NONVOLATILE MEMORY DEVICE IMPLEMENTING THE SAME

摘要

PURPOSE: A reading method of a nonvolatile memory device, and the nonvolatile memory device implementing the same are provided to increase production yield by improving an error of reading out. CONSTITUTION: A read-out margin threshold output unit(200) produces a read-out margin threshold between a read out voltage and the threshold voltage of the cell. An interference output unit(100) outputs a interference value giving an interference to the threshold voltage of the cell. A comparison unit(300) compares the threshold with the interference value. A coefficient storage unit stores an interference factor receiving influence in programming.