| 摘要 |
#CMT# #/CMT# The method involves gluing an external surface of interconnection stacks (M1-M3) on a support, and thinning a thin semiconductor substrate (45). An external surface of the substrate is etched by stopping the external surface on an insulating region (47). The insulating region is etched by stopping the insulating region on a conductive region (49), and an etched opening is filled with a metal i.e. aluminum (71). A protection layer is made of silicon oxide, silicon nitride and silicon oxynitride, and is formed of silicon oxide and silicon nitride multi-layer stacks. #CMT# : #/CMT# An independent claim is also included for a contact structure connecting a thin semiconductor substrate surface to a metallic track of an interconnection stack that is formed from a side of another thin semiconductor substrate surface, comprising a metallic region. #CMT#USE : #/CMT# Method for forming a contact on a rear surface of a thin semiconductor substrate connected to a metallic track of an interconnection stack that is formed on a front surface of a thin semiconductor substrate, in a lighted circuit associated to a lighted image sensing device. #CMT#ADVANTAGE : #/CMT# The method forms the contact on the thin semiconductor substrate surface connected to the metallic track of the interconnection stack that is formed on the opposite surface of the thin semiconductor substrate in the lighted circuit associated to the lighted image sensing device, in a simple manner, without corrosion on the metallic track while obtaining a structure with a plane upper surface. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a sectional view illustrating a method for forming a contact on a metallic track formed on a front surface of a lighted circuit by a rear surface. m1 : Metallic track M1-M3 : Interconnection stacks 45 : Thin semiconductor substrate 47 : Insulating region 49 : Conductive region 71 : Aluminum. |
