METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING A METAL-SEMICONDUCTOR COMPOUND REGION

摘要

PURPOSE: A method for manufacturing a semiconductor device with a metal-semiconductor compound region is provided to reduce a contact resistance of source and drain regions of a transistor by forming a metal-semiconductor compound region using a semiconductor element source layer like a silicon layer formed on the source and drain regions of the transistor. CONSTITUTION: A semiconductor substrate(1) has a first device region(A) and a second device region(B). A first transistor(TR1) is formed on the first device region of the semiconductor substrate. The first transistor is formed on the upper sides of a first source and drain region and a channel region between the first source and drain regions. An insulation layer(27,30) is formed on the semiconductor substrate including the first transistor. A first opening(33a) exposes the part of the first source and drain region by patterning the insulation layer. A first semiconductor element source layer(42a,42b) is formed on the first source and drain region exposed by the first opening and the upper side of the insulation layer adjacent to the first opening unit. A metal device source layer(55a,55b,55c) is formed on the semiconductor substrate including the first semiconductor element source layer. First and second metal-semiconductor compound regions are formed with a silicide heat process. The first metal-semiconductor region is formed on the first source and drain regions. The second metal-semiconductor compound region is formed on the upper side of the insulation layer adjacent to the first opening.