| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which eliminates the need for remaining film management in laser trimming and also reduces recoupling of a fuse by reducing influence of parasitic capacity of an interlayer insulating film, and a manufacturing method thereof. <P>SOLUTION: The semiconductor device includes a semiconductor substrate 1, the interlayer insulating film 2 having pad openings 11 at an interval and formed on the semiconductor substrate 1, lower metal layers 5 provided at positions corresponding to the pad openings 11, and upper metal layers 6 formed on the lower metal layers 5 at positions facing the interlayer insulating film 2, the upper metal layers 6 constituting aerial interconnects including the lower metal layers 5 as columns. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
