| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces resistance of a base region without influencing other characteristics. SOLUTION: The semiconductor device includes: a first conductivity type semiconductor substrate; a second conductivity type base region on a surface of the semiconductor substrate; a first conductivity type source region on the surface of the base region; a second conductivity type collector region on the rear surface of the semiconductor substrate; a trench gate formed in the source region and in a trench groove which passes through the base region via a gate insulating film; a conductive layer formed in a contact groove which is formed so as to pass through the source region; a source electrode which comes in contact with the conductive layer and the source region; and a second conductivity type latch-up suppression region which is formed in the base region coming in contact with the conductive layer and is higher in impurity concentration than the base region. The distance between the gate insulating film and the latch-up suppression region is not less than a maximum depletion layer width in which the trench gate forms on the base layer. COPYRIGHT: (C)2010,JPO&INPIT
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