METHOD OF MEASURING RESISTIVITY OF N TYPE SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method of measuring the resistivity of an n type semiconductor wafer, capable of stabilizing the measurement of the in-plane resistivity of the n type semiconductor wafer and improving reliability by the measurement. Ž

SOLUTION: A wafer is irradiated with ultraviolet rays to form an oxide film whose thickness is 1 nm or greater on the surface of the wafer. Then, corona discharge is executed to the wafer where the oxide film is formed. Then, the wafer which is turned to a thermally balanced state by the corona discharge is irradiated with light from a light source. Next, by a measuring probe, ΔVswhich is made detectable by a depletion layer formed near the surface of the wafer is detected. Then, the width of the depletion layer is calculated from the ΔVs, a carrier density is calculated from the width of the depletion layer, and the carrier density is converted to the resistivity further. Ž

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