发明名称 |
Nonvolatile memory device and method of fabricating the same |
摘要 |
Provided are a nonvolatile memory device having a vertical folding structure and a method of manufacturing the nonvolatile memory device. A semiconductor structure includes first and second portions that are substantially vertical. A plurality of memory cells are arranged along the first and second portions of the semiconductor structure and are serially connected.
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申请公布号 |
US2010200908(A1) |
申请公布日期 |
2010.08.12 |
申请号 |
US20100656681 |
申请日期 |
2010.02.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNG-HYUN;KIM YOUNG-EAL;LEE CHANG-SOO;MA DONG-JOON |
分类号 |
H01L27/115;H01L21/8246 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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