| 摘要 |
PROBLEM TO BE SOLVED: To avoid such a phenomenon that the lower surface of a sensor and a semiconductor substrate are not separated during cleaning and drying steps after a film between the sensor and the semiconductor substrate is removed by isotropic etching. SOLUTION: A sensor 7 with a beam structure is provided on the semiconductor substrate 1 with a cavity 9 in between. The cavity 9 is formed between the bottom of a recess 5 formed on one surface 1a of the semiconductor substrate 1 and the sensor 7. A part of the lower surface of the sensor 7 is exposed in the cavity 9. The cavity 9 is formed of the recess 5 and the opening 3a of a LOCOS oxide film. The depth of the cavity 9 is larger than the thickness of the LOCOS oxide film 3. COPYRIGHT: (C)2010,JPO&INPIT |
