| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device solving the problem that in a conventional semiconductor device, the gate capacity is too large, so that a high-speed action as a switching element is difficult to achieve. SOLUTION: In this semiconductor device, in a trench 9, there are formed a gate oxide film 10, an insulating spacer 11, and a gate electrode 12 and the insulating spacer 11 is formed along a side face of the trench 9 in a form of one cycle. By this structure, because of the film thickness of the insulating spacer 11, the gate capacity is reduced and the on-resistance value by the high integration is also reduced, so that a high-speed action as a switching element can be achieved. COPYRIGHT: (C)2010,JPO&INPIT |
