发明名称 |
Semiconductor Device Having a Second Level of Metallization Formed over a First Level with Minimal Damage to the First Level and Method |
摘要 |
A method for processing a semiconductor structure includes the steps of capping a top surface of the semiconductor structure that defines the metallization layer with a thin stop layer, forming a dielectric layer over the thin stop layer, wherein the dielectric layer defines at least one area where the thin stop layer is exposed, and removing the exposed thin stop layer to expose a top surface of the metallization layer using etchant gases substantially free from oxygen, so that the metallization layer is substantially free of damage.
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申请公布号 |
US2010203722(A1) |
申请公布日期 |
2010.08.12 |
申请号 |
US20100765662 |
申请日期 |
2010.04.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
BAO TIEN-I;JANG SYUN-MING |
分类号 |
H01L21/768;H01L21/306;H01L21/311 |
主分类号 |
H01L21/768 |
代理机构 |
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