NONVOLATILE MEMORY DEVICE AND METHOD OF WRITING DATA TO NONVOLATILE MEMORY DEVICE

摘要

A nonvolatile memory device (300) is provided, including a memory cell array having plural resistance variable elements which are switchable between plural resistance states in response to electric pulses with the same polarity. A series resistance setting unit (310) is provided between the memory cell array (70) and an electric pulse application unit (50). The series resistance setting unit is controlled to change a resistance value of a series current path with a predetermined range with time in at least one of a case where the selected resistance variable element is switched from a low-resistance state to a high-resistance state and a case where the selected resistance variable element is switched from the high-resistance state to the low-resistance state.