发明名称 SPIN TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
摘要 A spin transistor includes a source electrode, a drain electrode, and a gate electrode on a semiconductor substrate. At least one of the source electrode and the drain electrode includes a semiconductor region and a magnetic layer. The semiconductor region is formed in the semiconductor substrate. The magnetic layer is formed on the semiconductor region, and contains a crystalline Heusler alloy containing at least one of cobalt (Co) and iron (Fe). The semiconductor region and the magnetic layer contain the same impurity element.
申请公布号 US2010200899(A1) 申请公布日期 2010.08.12
申请号 US20100700767 申请日期 2010.02.05
申请人 MARUKAME TAKAO;ISHIKAWA MIZUE;INOKUCHI TOMOAKI;SUGIYAMA HIDEYUKI;SAITO YOSHIAKI 发明人 MARUKAME TAKAO;ISHIKAWA MIZUE;INOKUCHI TOMOAKI;SUGIYAMA HIDEYUKI;SAITO YOSHIAKI
分类号 H01L29/82;H01L21/336 主分类号 H01L29/82
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