发明名称 |
SPIN TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A spin transistor includes a source electrode, a drain electrode, and a gate electrode on a semiconductor substrate. At least one of the source electrode and the drain electrode includes a semiconductor region and a magnetic layer. The semiconductor region is formed in the semiconductor substrate. The magnetic layer is formed on the semiconductor region, and contains a crystalline Heusler alloy containing at least one of cobalt (Co) and iron (Fe). The semiconductor region and the magnetic layer contain the same impurity element.
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申请公布号 |
US2010200899(A1) |
申请公布日期 |
2010.08.12 |
申请号 |
US20100700767 |
申请日期 |
2010.02.05 |
申请人 |
MARUKAME TAKAO;ISHIKAWA MIZUE;INOKUCHI TOMOAKI;SUGIYAMA HIDEYUKI;SAITO YOSHIAKI |
发明人 |
MARUKAME TAKAO;ISHIKAWA MIZUE;INOKUCHI TOMOAKI;SUGIYAMA HIDEYUKI;SAITO YOSHIAKI |
分类号 |
H01L29/82;H01L21/336 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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