SUBSTRATE BONDING WITH METAL GERMANIUM SILICON MATERIAL

摘要

A method that in one embodiment is useful in bonding a first substrate (103) to a second substrate (303) includes forming a layer including metal over the first substrate. The layer including metal in one embodiment surrounds a semiconductor device, which can be a micro electromechanical system (MEMS) device. On the second substrate (303) is formed a first layer comprising silicon (401). A second layer (403) comprising germanium and silicon is formed on the first layer. A third layer (405) comprising germanium is formed on the second layer. The third layer is brought into contact with the layer including metal. Heat (and pressure in some embodiments) is applied to the third layer and the layer including metal to form a mechanical bond material between the first substrate and the second substrate in which the mechanical bond material is electrically conductive. In the case of the mechanical bond surrounding a semiconductor device such as a MEMS, the mechanical bond can be particularly advantageous as a hermetic seal for protecting the MEMS.