发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer stage-by-stage. <P>SOLUTION: A pin type photoelectric conversion element has a high response speed compared with a pn type photoelectric conversion element but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the end of the photoelectric conversion layer. Then, leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface of the end has two stages of tapered shapes, which conventionally has a single surface, so that the photoelectric conversion layer has a side surface of the end of a p-layer and a side surface of the end of an n-layer are not in the same plane. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010177689(A) 申请公布日期 2010.08.12
申请号 JP20100076765 申请日期 2010.03.30
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SASAGAWA SHINYA;HASEGAWA SHINYA;TAKAHASHI HIDEKAZU;ARAO TATSUYA
分类号 H01L31/10 主分类号 H01L31/10
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