发明名称 PLASMA TREATMENT APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To secure the reproducibility and reliability of a process by reducing a standing wave caused by harmonics from a plasma generated on a transmission line for transmitting high frequency power. <P>SOLUTION: A treatment apparatus includes: a treatment chamber 37 with a treatment gas supply device; an antenna 38 which is arranged in the treatment chamber and supplies high frequency energy to treatment gas from a high frequency power supply for generating plasma and generates the plasma; and a substrate electrode 1 arranged in the treatment chamber, the treatment apparatus supplies a high frequency voltage for ion pull-in to the substrate electrode, accelerates the ion in the plasma to apply plasma treatment to a sample loaded on the substrate electrode. The treatment apparatus further includes: cable length switching means 15a, 15b for switching lengths of cables 9a, 9b, 9c; a reflected wave detection means 13 for detecting a reflected wave from the side of the substrate electrode; and a switching control means 14 for controlling the cable length switching means, and switches a cable length to a preset length for each process condition prior to process treatment to lower a harmonic level of the reflected wave. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010177525(A) 申请公布日期 2010.08.12
申请号 JP20090019851 申请日期 2009.01.30
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 IIDA TSUTOMU;OGOSHI YASUO;ITO ATSUSHI
分类号 H01L21/3065;H01L21/304;H05H1/46 主分类号 H01L21/3065
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