| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To manufacture a lanthanum boride film having good crystallinity by improving variation of film quality in a sputtering method, to form a lanthanum boride film having uniform film quality (crystallinity) on a substrate having a large area, and to provide a method of manufacturing an electron emitting element excellent in electron emitting characteristics (stability of electron emission in particular). <P>SOLUTION: In a process to deposit the lanthanum boride film on the substrate by means of the sputtering method while relatively moving the substrate and a target of lanthanum boride with the substrate and the target of lanthanum boride disposed face to face, when the mean free path of sputtering gas molecules during deposition isλ(mm), and a distance between the substrate and the target is L(mm), L/λis set to be not less than 20, and a value obtained by dividing a discharge power value by the area of the target is set to be 1-5 W/cm<SP>2</SP>. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
