| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a voltage generation circuit low in power consumption and high in precision. Ž<P>SOLUTION: The voltage generation circuit is provided with, for example, a plurality of NMOS transistors MN1 and MN2 whose source/drain paths are serially connected and a constant current source IS1 for operating the MN1 and MN2 in a sub-threshold region between a power supply VCC and a ground power supply voltage GND. Gates of the MN1 and MN2 are made common to the drain of the MN2. The gate width W1 and the gate length L1 of the MN1 and the gate width W2 and the gate length L2 of the MN2 are set so that, for example, L1=L2 and W2>W1 are satisfied. Thus, the drain voltage (Vout_2n) of the MN1 has positive temperature characteristics with the GND as a reference, and for example, it is possible to generate a voltage having small temperature dependency by adding a device having negative temperature characteristics in a post stage. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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