Method of Producing a Partly or Completely Semi-Insulating or P-Type Doped ZnO Substrate, Substrates Obtained, and Electronic, Electro-Optic or Optoelectronic Devices Comprising Them

摘要

Method of producing a partly or completely semi-insulating or p-type doped ZnO substrate from an n-type doped ZnO substrate, in which the n-type doped ZnO substrate is brought into contact with an anhydrous molten salt chosen from anhydrous molten sodium nitrate, lithium nitrate, potassium nitrate and rubidium nitrate. Partly or completely semi-insulating or p-type doped ZnO substrate, said substrate being in particular in the form of a thin layer, film or in the form of nanowires ; and said substrate being doped at the same time by an element chosen from Na, Li, K and Rb; by N; and by O; it being furthermore possible for ZnO or GaN to be epitaxially grown on this substrate. Electronic, optoelectronic or electro-optic device such as a light-emitting diode (LED) comprising this substrate.