发明名称 |
METHOD OF READING MEMORY CELL |
摘要 |
A method for reading a memory cell (20) of a semiconductor memory (10) includes initiating a precharge or predischarge operation on a bit line (24) prior to arrival of a triggering edge of a clock signal (32) that initiates a read operation. A word line (22) is activated responsive to the triggering edge of the clock signal (32), and data is read from the memory cell (20).
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申请公布号 |
US2010202221(A1) |
申请公布日期 |
2010.08.12 |
申请号 |
US20090624403 |
申请日期 |
2009.11.23 |
申请人 |
FREESCALE SEMICONDUCTOR, INC |
发明人 |
GUPTA AMIT KUMAR;DWIVEDI DEVESH;JAIN SANJEEV KUMAR;MISHRA YATENDER |
分类号 |
G11C7/00;G11C7/12 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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