| 摘要 |
There is provided a highly dielectric film which has highly dielectric property, can be made thin, being excellent in winding property (flexibility) and assures a small dielectric loss, and the highly dielectric film comprises a vinylidene fluoride type polymer (A), and compound oxide particles (B) represented by the formula: MaTibOc, wherein M is a metallic element of the group II of from the second period to the fifth period in Periodic Table; a is from 0.9 to 1.1; b is from 0.9 to 1.1; c is from 2.8 to 3.2, and the compound oxide particles (B) are contained in an amount of 10 to 500 parts by mass based on 100 parts by mass of the vinylidene fluoride type polymer (A). |
