METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING A TRANSISTOR

摘要

PURPOSE: A method of fabricating a semiconductor device having a transistor is provided to improve the degree of integration of a semiconductor by burying a gate electrode of a high voltage transistor in a gate trench. CONSTITUTION: A first gate trench(115a) is formed in a first active region of a semiconductor substrate(100). A first gate film(120a) partly filling the first gate trench is formed. A first spacer(130a) is formed on the upper sidewall of the first gate trench. A first ion injection process is performed and the first gate film is formed into a first conductive gate electrode(140). A first impurity region(139) same conductive as the first gate electrode is formed within the first active region.