发明名称 PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS
摘要 PURPOSE: A plasma enhanced chemical vapor deposition apparatus is provided to improve the flatness of a discharge electrode unit by filling an insulating material between electrodes of the discharge electrode unit. CONSTITUTION: A discharge electrode unit(110) comprises a flat rear panel(160), a front panel, an upper panel(181), and a lower panel(182). The rear panel is formed with an insulating material. The front panel includes first and second electrodes(11a,116) which are arranged on a flat insulating layer and are spaced apart from each other by a specific interval. A plurality of first and second electrodes are extended in a longitudinal direction. The flatness of the front panel is improved by using insulating material to fill the area between the first and second electrodes.
申请公布号 KR20100089540(A) 申请公布日期 2010.08.12
申请号 KR20090008842 申请日期 2009.02.04
申请人 LG ELECTRONICS INC. 发明人 LEE, SEUNG YOON;HWANG, DOO SUP;AHN, SEH WON
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
主权项
地址