METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To prevent abnormality of an interconnect resistance value and short-circuiting of a contact hole to prevent degradation of the yield of a semiconductor device. Ž<P>SOLUTION: A semiconductor wafer 102 is subjected to nitrogen plasma processing either after a step of forming a resist pattern 19 on an interlayer dielectric 18 and thereafter dry-etching the interlayer dielectric 18 or after a step of further dry-etching a stressor SiN film 17 with the resist pattern 19 removed therefrom. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž