| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low-profile stacked device formed by stacking a plurality of insulator layers. Ž<P>SOLUTION: The stacked device includes a first ground electrode layer 12, a first dielectric sheet 1c formed on the first ground electrode layer 12, an intermediate electrode layer 21 formed on the first dielectric sheet 1c, a second dielectric sheet 1a formed on the intermediate electrode layer 21, a second ground electrode layer 11 formed on the second dielectric sheet 1a, and a via type inductor conductor 31 formed so as to penetrate the second dielectric sheet 11 and electrically connect the intermediate electrode layer 21 to the second ground electrode layer 11. The intermediate electrode layer 21 has a capacity electrode region opposed to the first ground electrode layer 12 and a lead-out electrode region not opposed to the first ground electrode layer 12, and the via type inductor conductor 31 is connected to the lead-out electrode region of the intermediate electrode layer 21. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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