发明名称 |
PHASE-CHANGE MEMORY UNIT, METHOD OF FORMING THE SAME, AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME |
摘要 |
<p>PURPOSE: A phase-change memory unit, a method of forming the same, and a phase-change memory device including the same are provided to improve electrical characteristic by heating a phase change material layer pattern with small current and reducing a reset current. CONSTITUTION: A first lower electrode structure(170) is formed on an ohmic layer(140). The first lower electrode structure comprises a first bottom electrode(174) and a second bottom electrode(172). The first bottom electrode comprises a first metal nitride having a first specific resistance. The second bottom electrode comprises a second metal nitride having a second specific resistance lower than the first specific resistance. A phase change material layer pattern(180) is formed on the lower electrode structure. The top electrode(190) is formed on the phase change material layer pattern.</p> |
申请公布号 |
KR20100089132(A) |
申请公布日期 |
2010.08.12 |
申请号 |
KR20090008228 |
申请日期 |
2009.02.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM, HYUN SEOK;LIM, TAI SOO;LEE, HYUN SUK |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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