| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistance variable nonvolatile storage device that is improved in manufacturing yield by suppressing resistance variance. Ž<P>SOLUTION: The resistance variable nonvolatile storage device includes a substrate 21, first and second n-type diffusion layers 22a and 29a formed on the substrate 21, a first interlayer dielectric 23 formed on the first and second n-type diffusion layers 22a and 29a, a resistance variation element 30 formed on the first interlayer dielectric 23 by laminating first and second resistance variation layers 24a and 24b and an upper electrode 28, a second interlayer dielectric 25 formed on the resistance variation element 30 and the first interlayer dielectric 23, wiring 26 formed on the second interlayer dielectric 25, a first electric connection path extending from the wiring 26 to a first p-type diffusion layer 22b through the resistance variation element 30, and a second electric connection path extending from the wiring 26 to a second p-type diffusion layer 29b. The impedance of the second electric connection path is lower than that of the first electric connection path. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
