| 摘要 |
PURPOSE: A method for programming a non-volatile memory device is provided to program the n-bits of multi-level cells using pre-programmed data in word-lines of a memory block. CONSTITUTION: A program-command and data to be programmed are inputted(S301). A controller selects the 0-th word line of a 0-th memory block(S303). The inputted data is programmed in a least significant bit(LSB) page(S305). A program-command and data are re-inputted(S307). The controller programs data in a center-significant-bit(CSB) page(S309). A program-command and data are inputted(S311). The controller confirms a word-line to be subsequently programmed in the 0-the memory block(S313). According to the program-command and the inputted data, the LSB page and the CSB page are programmed(S315 to S321). |
