| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device preventing the peeling of bonding pad and being capable of preventing the generation of a leakage current between the bonding pads, and to provide a method of manufacturing the same. <P>SOLUTION: In the semiconductor device 110, HBT (hetero-structure bipolar transistors) are integrated as one of components. The semiconductor device includes configurations sequentially forming etching-stop layers 12, collector-contact layers 13, collector layers 14, inclined collector layers 15, setback layers 16 and base layers 17 on a semi-insulating InP substrate 11. The semiconductor device includes the configurations in which the base layers 17 composed of thin-films consisting of InGaAs and contain no P, SiN 23 is formed on the base layers 17 and the bonding pads 25 are formed on SiN 23. <P>COPYRIGHT: (C)2010,JPO&INPIT |
