发明名称 |
METHOD OF FORMING SEMICONDUCTOR DEVICE |
摘要 |
A method of forming a semiconductor device includes preparing a substrate having a recessed area. A silicon oxide layer is formed at the recessed area. A catalytic nitridation treatment is performed for an upper portion of the silicon oxide layer to form a nitridation reactant on the upper portion of the silicon oxide layer. A dielectric layer is formed on the silicon oxide layer where the nitridation reactant is formed. The dielectric layer is annealed. According to the foregoing method, recession of the dielectric layer is prevented to fabricate a high-quality semiconductor device.
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申请公布号 |
US2010203700(A1) |
申请公布日期 |
2010.08.12 |
申请号 |
US20100686638 |
申请日期 |
2010.01.13 |
申请人 |
BYUN KYUNGMUN;JUNG DEOK-YOUNG;GOO JU-SEON;HONG EUNKEE |
发明人 |
BYUN KYUNGMUN;JUNG DEOK-YOUNG;GOO JU-SEON;HONG EUNKEE |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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地址 |
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