| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is excellent in reflow resistance. SOLUTION: The semiconductor device is composed in a manner such that a semiconductor element 1 and a lead frame 2 as a supporter are adhered with an adhesive 3, and the adhesive 3 meets the following relation: the calculated value at 260°C of peel strength on an interface between the lead frame and adhesive is 0.02 MPa m<SP>1/2</SP>or more, using an elastic modulus(A) of the adhesive converted from an amount of warpage of a laminate obtained by bonding with the adhesive of thickness 20 (μm) a silicon chip which has an area of 49 mm<SP>2</SP>, a thickness of 350 μm, an elastic modulus of 131 GPa at 260°C, a thermal expansion coefficiency of 3.0 ppm/K at 260°C, and a Poisson ratio of 0.28 and a copper lead frame which has an area of 90.25 mm<SP>2</SP>, a thickness of 155 μm, an elastic modulus of 127 GPa at 260°C, a thermal expansion coefficiency of 17.0 ppm/K at 260°C, and a Poisson ratio of 0.343. COPYRIGHT: (C)2010,JPO&INPIT |
