发明名称 |
MEMORY MODULE CUTTING OFF DM PAD LEAKAGE CURRENT |
摘要 |
A memory module includes: an ODT circuit on a memory device and including pull-up and pull-down resistors connected between pull-up and pull-down transistors. A data masking (DM) pad is provided in a tap region of the module board. A current leakage monitoring unit is also provided and receives a ground state signal from the DM pad and a bit configuration signal from the memory device and disables the pull-up transistors to cut off a current path between the pull-up resistors of the ODT circuit and the DM pad during a ODT enable mode.
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申请公布号 |
US2010202180(A1) |
申请公布日期 |
2010.08.12 |
申请号 |
US20100693010 |
申请日期 |
2010.01.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SEOK-IL;HAN YOU-KEUN;SEO SEUNG-JIN |
分类号 |
G11C5/02;G11C7/00;G11C7/06 |
主分类号 |
G11C5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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