发明名称 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
摘要 Disclosed herein is a fabrication method of a semiconductor device to order to increase an operation liability of the semiconductor device. A method for fabricating a semiconductor device comprises forming a recess in a semiconductor substrate, forming a word line in a lower part of the recess, oxidizing a top portion of the word line, and depositing an insulating material in a remained part of the recess.
申请公布号 US2010200948(A1) 申请公布日期 2010.08.12
申请号 US20090493047 申请日期 2009.06.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM SE HYUN
分类号 H01L23/535;H01L21/768 主分类号 H01L23/535
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