SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a semiconductor device which comprises an insulating film that is formed on a substrate and has a low porosity region in which the porosity is low and a high porosity region in which the porosity is higher than that in the low porosity region, and a copper wiring line that is formed in a wiring groove in the insulating film.  The insulating film is formed below the wiring groove and around the side wall of the wiring groove.