| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable infrared detecting element. <P>SOLUTION: The infrared detecting element includes a semiconductor substrate 1 made of an N-type InAs, buffer layers 2, 3, and 4 formed on the semiconductor substrate 1 and containing an InAs<SB>X1</SB>Sb<SB>1-X1</SB>, a light-absorbing layer 5 formed on the buffer layers 2, 3, and 4 and made of an InAs<SB>X2</SB>Sb<SB>1-X2</SB>, and a cap layer 6 formed on the light-absorbing layer 5 and made of an InPSb. A composition ratio X1 is larger than a composition ratio X2, and X1 decreases step by step as it comes closer from the semiconductor substrate 1 to the light-absorbing layer 5. A P-type impurity is added to the surface of the cap layer 6 to spread into the light-absorbing layer 5. When the semiconductor substrate 1 is made of an InSb, the size relation between both composition ratios is reversed. <P>COPYRIGHT: (C)2010,JPO&INPIT |
