| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is miniaturized easily while meeting a demand for high withstand voltage and is used as a variety of elements, such as a step-up circuit and a step-down circuit, and a manufacturing method for the semiconductor device. SOLUTION: The semiconductor device includes first and second wells formed on a semiconductor substrate, a plurality of high withstand voltage MOS transistors formed in the first well, and a low withstand voltage MOS transistor formed in the second well. The plurality of high withstand voltage MOS transistors include a first high withstand voltage MOS transistor having a gate insulating film thicker than a gate insulating film of the low withstand voltage MOS transistor, and a second high withstand voltage MOS transistor having a gate insulating film thinner than a gate insulating film of the first high withstand voltage MOS transistor. COPYRIGHT: (C)2010,JPO&INPIT |
