| 摘要 |
PROBLEM TO BE SOLVED: To reduce the size of a memory cell of a magnetic memory device. SOLUTION: A 1T1MTJ memory cell is configured as follows. An MTJ element and a selection transistor are connected in series. In consideration that a current drive capability of the selection transistor varies with a direction of a current made to flow into the MTJ element, characteristics of the MTJ element are adjusted such that a writing current made to flow into the MTJ element in the current direction of the low current drive capability of the selection transistor becomes smaller than that of made to flow into the MTJ element in the current direction of the high current drive capability of the selection transistor, thereby achieving use of the smaller-sized selection transistor. COPYRIGHT: (C)2010,JPO&INPIT |
