| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of cleaning a thin film formation apparatus capable of efficiently cleaning the thin film formation apparatus. Ž<P>SOLUTION: First, deposition deposited inside the apparatus is removed by supplying a cleaning gas containing hydrogen fluoride in a reaction tube 2. Next, an oxidation step of oxidizing silicofluoride which is deposited inside the apparatus is performed by supplying oxygen radical in the reaction tube 2. Then, an oxide removal step of removing the oxidized silicofluoride is performed by supplying the cleaning gas containing hydrogen fluoride in the reaction tube 2, and the oxidation step and the oxide removal step are repeated a plurality of times. Thereby, the thin film formation apparatus 1 is efficiently cleaned. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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