| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for preventing unexpected contamination by suspended elements and compounds thereof which come from a new jig when used for a heat treatment furnace. Ž<P>SOLUTION: After clearly understanding the objectives of heat treatment to identify elements needed for the objectives, conditions under which an oxide film is formed on the surface of a silicon wafer are determined within the scope which does not affect the objectives and effects of the heat treatment. A heat treatment process is established by combining these items to be integrated into a process of producing a silicon wafer. In addition, the occurrence of the elements and compounds thereof which are to be contaminants coming from a newly introduced jig and the like is measured or anticipated to take measures for preventing the invasion of such contaminants into the silicon wafer beforehand or after the fact. In particular, a barrier is formed on the surface of the silicon wafer by a relatively easy method of atmosphere control in the heat treatment process. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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