| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor apparatus which integrates two or more kinds of field effect transistors having a different threshold voltage on a semiconductor substrate, and which integrates a field effect transistor having a good controllability of the threshold voltage and to provide a method of manufacturing the same. Ž<P>SOLUTION: The semiconductor apparatus 30 on which an E-FET and a D-FET having a different threshold voltage are formed on a substrate 301, includes: the substrate 301; a channel layer 303 which functions as each channel for the E-FET and the D-FET, and which is formed on an upper layer of the substrate 301; and an electron supplying layer 305 consisting of AlGaAs, which is formed on an upper layer of the channel layer 303, and which includes impurities to be a donor for supplying electron to the channel layer 303. Among regions of the electron supplying layer 305, at least one region of the E-FET and the D-FET further includes a fluorine atom. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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