发明名称 |
Deep Trench Isolation Structures and Methods of Formation Thereof |
摘要 |
Deep trench isolation structures and methods of formation thereof are disclosed. Several methods of and structures for increasing the threshold voltage of a parasitic transistor formed proximate deep trench isolation structures are described, including implanting a channel stop region into the bottom surface of the deep trench isolation structures, partially filling a bottom portion of the deep trench isolation structures with an insulating material, and/or filling at least a portion of the deep trench isolation structures with a doped polysilicon material.
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申请公布号 |
US2010203703(A1) |
申请公布日期 |
2010.08.12 |
申请号 |
US20100702368 |
申请日期 |
2010.02.09 |
申请人 |
TILKE ARMIN;SHUM DANNY PAK-CHUM;PESCINI LAURA;KAKOSCHKE RONALD;STRENZ KARL ROBERT;STIFTINGER MARTIN |
发明人 |
TILKE ARMIN;SHUM DANNY PAK-CHUM;PESCINI LAURA;KAKOSCHKE RONALD;STRENZ KARL ROBERT;STIFTINGER MARTIN |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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