Photolithographische Maske und Verfahren zum Bilden eines Musters auf der Maske

摘要

The mask has a pattern having two line-shaped structural components (10, 12) that are formed on the mask parallel to each other and form a gap (20). An arrangement of auxiliary structures has two auxiliary structures (14, 15) that are arranged in the gap parallel to the structural components. The arrangement of the auxiliary structures has space for the components, where the space is larger than another space having adjacent auxiliary structures. An independent claim is also included for a method of forming a pattern on mask for lithographic projection on a substrate.