| 摘要 |
PURPOSE: A programming method of a flash memory device is provided to reduce a program operation time by setting a start bias according to a target verification voltage of data to be programmed in a program operation using an ISPP(Incremental Step Pulse Programming) method. CONSTITUTION: A first starting bias is applied to a first program voltage in the selected memory cell(100). The verification operation is implemented by using the verification voltage. A program pass or a program fail is determined by the verification action. A second starting bias is set in a state of the program fail. The second starting bias is increased as much as the step voltage value. The program phase is implemented again by using the second program voltage instead of the first program voltage. |
