METHOD OF MANUFACTURING EPITAXIAL WAFER, AND METHOD OF MANUFACTURING SOLID-STATE IMAGING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer, which can manufacture the epitaxial wafer having an ion implantation layer with required minimum process and can attain both reduction in contamination and cost.

SOLUTION: The method of manufacturing the epitaxial wafer includes steps of: preparing at least a silicon single-crystal substrate; thereafter ion-implanting at least one kind of boron, carbon, aluminum, arsenic and antimony into the silicon single-crystal substrate with a dose amount of 5×1014to 1×1016atoms/cm2; then cleaning the ion-implanted silicon single-crystal substrate without recovery heat treatment; and thereafter forming an epitaxial layer at a temperature of 1,100°C or higher by means of a single-wafer epitaxial device.

COPYRIGHT: (C)2010,JPO&INPIT