| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing stress acting on a power semiconductor element when a heat sink is flexed and deformed. <P>SOLUTION: The power semiconductor element such as a transistor is installed on an upper surface of the heat sink 31 in a square shape via an insulating layer 44, and connection pieces 22a and 21a of a flat plate type conductor are superposed on and fixed to an upper surface of the power semiconductor element. The connection pieces 22a and 21a have curved portions 38 which are increased in radii of arcuate cross sections continuously toward the center of the heat sink 31. When the heat sink 31 and the insulating layer 44 are flexed and deformed in a diagonal direction, the connection pieces 22a and 21a are easily deformed in a diagonal direction of the heat sink 31 along lines of both edges of the curved portion 38. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
