发明名称 OVERHEAT DETECTOR CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide an overheat detector circuit which can inhibit erroneous determination. SOLUTION: The overheat detector circuit detects the overheat state of an MOS (Metal Oxide Semiconductor) 100. The circuit includes a constant current source 13 and a diode 14 which are series-connected between a power supply and the ground, a comparator 15 for comparing a reference voltage with the forward voltage of the diode 14, a constant current source 23 and a Zener diode 24 which are series-connected between the power supply and the ground, a comparator 25 for comparing a reference voltage with the reverse voltage of the Zener diode 24, and an AND circuit 30 which outputs a signal indicating that the MOS 100 is in the overheat state only when both the comparator 15 and the comparator 25 have reached thresholds in comparison. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010175522(A) 申请公布日期 2010.08.12
申请号 JP20090021868 申请日期 2009.02.02
申请人 DENSO CORP 发明人 ITAKURA HIROKAZU
分类号 G01K7/00 主分类号 G01K7/00
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