发明名称 |
Method for Producing Si Bulk Polycrystal Ingot |
摘要 |
A method is provided for producing a Si bulk polycrystal ingot with high quality and high homogeneity, which has no significant crystal defects and is free from diffused impurities with a high yield. An upper face of a Si melt is locally cooled by bringing coolant close to a surface of the Si melt from an upper part of a crucible in the crucible containing the Si melt or by inserting the coolant into the Si melt. A dendrite crystal is formed in the vicinity of the surface of the Si melt. Cooling is performed thereafter while maintaining a proper temperature distribution, and a Si bulk crystal is grown from an upper part toward a lower part using a lower face of the dendrite crystal as a fresh growth face.
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申请公布号 |
US2010202955(A1) |
申请公布日期 |
2010.08.12 |
申请号 |
US20080671139 |
申请日期 |
2008.07.31 |
申请人 |
NATIONAL UNIVERISTY CORPORATION TOHOKU UNIVERISTY;ASA CO.LTD |
发明人 |
USAMI NORITAKA;NAKAJIMA KAZUO;TAKAHASHI ISAO |
分类号 |
C01B33/02 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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