摘要 |
A gas treatment device for processing a gas using plasma, wherein the gas treatment device is highly versatile and capable of rapidly processing a large quantity of gas that includes particularly an aromatic compound or other component that is difficult to process. The gas treatment device comprises a plasma equipment series comprising a plurality of gas processing units (20A, 20B) arranged in series on a gas flow channel; and a control section (10) for controlling the operation of each unit of plasma equipment (20A, 20B) of the plasma equipment series. Each of the units of plasma equipment (20A, 20B) comprises a cavity (22A, 22B) composed of an electrical conductor and communicated with the gas flow channel; a plasma generator (23A, 23B) for generating plasma within the cavity (22A, 22B); and microwave radiator (24A, 24B) for radiating microwaves to the plasma generated by the plasma starting section (23A, 23B). The control means (10) selects the number of units of plasma equipment (20A, 20B) to operate according to a component of the introduced gas. |