| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a tunnel-type magnetic detection element capable of increasing, in particular, the resistance change ratio (ΔR/R). Ž<P>SOLUTION: A metal insert layer 14 formed of at least one from among Ti, Mg, Ir-Mn, Ru and Pt is inserted between a first soft magnetic layer 13 and a second soft magnetic layer 15. The first soft magnetic layer 13 and the second soft magnetic layer 15 are magnetically coupled and magnetized in the same direction. An enhancement layer 12 is formed between the first soft magnetic layer 13 and an insulation barrier layer 5. Thus, a tunnel-type magnetoresistive element, having the insulation barrier layer 5 formed of Mg-O, can increase the resistance change ratio (ΔR/R), as compared with conventional types. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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