发明名称 SURFACE ACOUSTIC WAVE ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a surface acoustic wave element having superior frequency temperature characteristics equal to or higher than those of an AT cut crystal vibrator. <P>SOLUTION: The surface acoustic wave element 1 has a crystal substrate 2 having a cut angle (0&plusmn;0.25&deg;, 113 to 135&deg;, &plusmn;(40 to 49&deg;)) expressed in terms of Euler angles (&phiv;&deg;, &theta;&deg;, &psi;&deg;), an IDT 3 (interdigitated finger electrode) provided on the crystal substrate 2 and having a plurality of electrode fingers 31a and 31b, and an SiO<SB>2</SB>film 6 provided covering the IDT 3 from the opposite side from the crystal substrate 2 and consisting principally of SiO<SB>2</SB>, wherein the SiO<SB>2</SB>film 6 has a standardized film thickness hs/&lambda; of 0.0046 to 0.0233 (where hs is an average thickness [nm] of the SiO<SB>2</SB>film 6 and &lambda; is the wavelength [nm] of a surface acoustic wave). <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010177819(A) 申请公布日期 2010.08.12
申请号 JP20090015985 申请日期 2009.01.27
申请人 EPSON TOYOCOM CORP 发明人 IIZAWA KEIGO
分类号 H03H9/145;H01L41/09;H01L41/18;H01L41/22;H01L41/23;H03H9/25 主分类号 H03H9/145
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