| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device or a plasma processing method wherein variations of performance are suppressed. SOLUTION: The plasma processing device has a processing chamber disposed in a vacuum container 101 and uses plasma generated in the processing chamber to process a wafer 112 placed on a stage disposed in the processing chamber. Before processing of etching a film layer comprising a film having a metallic material disposed on the wafer and an oxide film disposed under that film, or a material having a high dielectric constant, another wafer preliminarily provided with a film containing the same kind of metal as the metallic material, on a surface thereof, is processed to deposit particles comprising the metal, and then the film layer on the wafer is processed. COPYRIGHT: (C)2010,JPO&INPIT |
